2011-2014 - Nanotechnology Laboratory Engineer.
February 2015-September 2015 - Sales Manager, Distrilab LLP.
November 2015-March 2016 - Research Fellow, Structural Analysis Laboratory, Nazarbayev University.
September 2016-January 2017 - Senior Lecturer, Almaty University of Power Engineering and Telecommunications.
January 2017-June 2019 - Senior Lecturer, Kazakh-British Technical University.
June 2019-June 2021 - Assistant Professor, Satbayev University.
August 2021–August 2025: Assistant Professor at Astana IT University
August 2025–present: Associate Professor at MITU
2005 - 2009 . .
2009 - 2011 . .
2011 - 2014 . .
2019 - 2021 . .
Creating a wind turbine installation
Creating an NFT marketplace
1. Nussupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Beisembetov I.K., Kenzhaliev B.K., Akhmetov T.K., and Seitov B.Zh. Structure and Composition of Silicon Carbide Films Synthesized by Ion Implantation // Physics of the Solid State. - 2014. - Vol. 56, No. 11. - P. 2307–2321. (Impact-factor 2013 – 0.782. SCOPUS, Thomson Reuters).
2. Beisembetov I.K., Nussupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Synthesis of SiC thin films on Si substrates by ion-beam sputtering // Surface. X-ray, synchrotron, and neutron studies. 2015. (Impact factor 2013 – 0.359. SCOPUS, Thomson Reuters).
3. Beisembetov I.K., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Nusupov K.Kh., Akhmetov T.K., Seitov B.Zh. Infrared spectroscopy of ion-synthesized silicon carbide thin films // Bulletin of the Nizhny Novgorod State University. 2013. No. 4(1). pp. 42-55.
4. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Formation and structure of a nanosized layer of silicon carbide on silicon during implantation of high doses of carbon ions // Nanomaterials and nanostructures - XXI century. – Moscow: Radio Engineering Publishing House. – 2013. – Vol. 4, No. 2. – Pp. 36−42.
5. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Ivlev R. Structure of nanosized carbon and silicon carbide films on silicon obtained by magnetron and ion-beam sputtering of a target // Nanomaterials and nanostructures - XXI century. – Moscow: Radio Engineering Publishing House. – 2012. – Vol. 3, No. 4. – Pp. 30−35.
6. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Infrared spectroscopy and X-ray reflectometry of SiC thin films on Si // Reports of the NAS RK. − 2013. − No. 6.
7. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Distribution of carbon atoms in silicon after high-dose implantation of C+ ions into Si // Bulletin of the NAS RK. Physico-Mathematical Series. − 2013. − No. 6.
8. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Ionic synthesis and properties of silicon carbide and carbon films // Vestnik KazNU im. Al-Farabi. Physical series. – 2013. – No. 3(46). – pp. 27–36.
9. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Sagyndykov A.B., Akhmetov T.K. IR spectroscopy of silicon layers implanted with carbon ions // Bulletin of KBTU. − Almaty. − 2011. − No. 2. − P. 24–28.
10. Beisembetov I.K., Beysenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Nusupov K.Kh., Akhmetov T.K. Ion synthesis of silicon carbide thin films. // Abstracts of the IV All-Russian Conference and School of Young Scientists and Specialists "Physical and Physicochemical Foundations of Ion Implantation". - Novosibirsk, 2012. - P. 61.
11. Nusupov K.Kh., Beysenkhanov N.B., Zharikov S.K., Beysembetov I.K., Kenzhaliev B.K., Akhmetov T.K., Seitov B.Zh. Formation of SiC thin films on Si substrates by ion-beam sputtering // Collection of abstracts of the X conference on current problems of physics, materials science, technology and diagnostics of silicon, nanometer structures based on it "Silicon - 2014. - Irkutsk, 2014. – P. 158.
12. Beisembetov I.K., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Nusupov K.Kh., Akhmetov T.K. Ion synthesis and properties of silicon carbide and carbon films. // Abstracts of the IV All-Russian Conference and School of Young Scientists and Specialists "Physical and Physicochemical Foundations of Ion Implantation". – Novosibirsk, 2012. – P. 117.
13. Beisembetov I.K., Nusupov K.Kh., Zharikov S.K., Kenzhaliev B.K., Beisenkhanov D.N., Dzharas A.K., Akhmetov T.K., Seitov B.Zh. Study of silicon carbide films synthesized by ion implantation // Proceedings of the VI International Scientific and Practical Conference "Problems of Innovative Development of the Oil and Gas Industry" / KBTU. – Almaty, 2014.
14. Beisembetov I.K., Nusupov K.Kh., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Mit’ K.A., Akhmetov T.K., Seitov B.Zh. Synthesis of SiC and C thin films on Si substrates by magnetron and ion-beam sputtering. // Proceedings of the 5th International Scientific and Practical Conference “Problems of Innovative Development of the Oil and Gas Industry” / KBTU. – Almaty, 2013. − Pp. 192–198.
15. Beisembetov I.K., Beisenkhanov N.B., Zharikov S.K., Kenzhaliev B.K., Nusupov K.Kh., Akhmetov T.K. IR study of high-temperature instability of solid SiC films synthesized ion implantation // Proceedings of the 4th International Scientific and Practical Conference "Problems of Innovative Development of the Oil and Gas Industry" / KBTU. – Almaty, 2012.
16 A.M. Meirmanova*, PhD, Senior Lecturer1 T.K. Akhmetov, PhD, Assistant Professor1 K.A. Akylbekov, PhD Student2 ANALYSIS OF THE DIGITAL MARKET OF KAZAKHSTAN USING TIME SERIES ANALYSIS. Kazakh Economics, 2024, No. 1 (54) 286 DOI 10.52260/2304-7216.2024.1(54).35 UDC 33
The purpose of the discipline is to form students' knowledge of mechanics, electricity and magnetism, vibrations and waves, quantum and nuclear physics, statistical physics and thermodynamics. The study of the basics of thermodynamics, electricity and magnetism, electrostatics, direct current, magnetic field, magnetic properties of matter, the basics of Maxwell's theory, optical devices and their use in technological production, atomic and nuclear physics. When studying the discipline, the emphasis is on the most universal methods, laws and models of modern physics, the specificity of the rational method of cognition of the surrounding world is demonstrated, efforts are focused on the formation of students' key and subject competencies, as well as a general physical worldview and the development of physical thinking.
The purpose of the discipline is to develop students' abilities to use modern digital tools and technologies to improve the effectiveness of management processes, planning and development of the organization's activities, including the development, implementation and management of projects. As a result of studying the discipline, students will gain knowledge about the specifics of using blockchain technology, acquire the skills and abilities to choose the most suitable cryptocurrencies for investing, as well as the development of new approaches to building information systems based on distributed registries.